vishay siliconix si2304bds document number: 72503 s-80642-rev. d, 24-mar-08 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? halogen-free opti on available product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 30 0.070 at v gs = 10 v 3.2 2.6 0.105 at v gs = 4.5 v 2.6 ordering information: si2304bds-t1-e3 (lead (pb)-free) si2304bds-t1-ge3 (lead (pb)-free and halogen-free) * marking code si2304bds (l4)* g s d top view 2 3 to-236 (sot-23) 1 notes: a. surface mounted on fr4 board, t 5 s. b. pulse width limited by maximum junction temperature. c. surface mounted on fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 s steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a, b t a = 25 c i d 3.2 2.6 a t a = 70 c 2.5 2.1 pulsed drain current i dm 10 continuous source current (diode conduction) a, b i s 0.9 0.62 maximum power dissipation a, b t a = 25 c p d 1.08 0.75 w t a = 70 c 0.69 0.48 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 s r thja 90 115 c/w steady state 130 166 maximum junction-to-foot (drain) steady state r thjf 60 75 rohs compliant
www.vishay.com 2 document number: 72503 s-80642-rev. d, 24-mar-08 vishay siliconix si2304bds notes: a. pulse test: pw 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t a = 25 c, unless otherwise noted parameter symbol test conditions limits unit min. typ. max. static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 3.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 0.5 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 v ds = 30 v, v gs = 1.0 v, t j = 25 c 1 on-state drain current a i d(on) v ds 4.5 v, v gs = 10 v 6a drain-source on-resistance a r ds(on) v gs = 10 v, i d = 2.5 a 0.055 0.070 v gs = 4.5 v, i d = 2.0 a 0.080 0.105 forward transconductance a g fs v ds = 4.5 v, i d = 2.5 a 6.0 s diode forward voltage v sd i s = 1.25 a, v gs = 0 v 0.8 1.2 v dynamic gate charge q g v ds = 15 v, v gs = 5 v, i d = 2.5 a 2.6 4 nc total gate charge q gt v ds = 15 v, v gs = 10 v, i d = 2.5 a 4.6 7 gate-source charge q gs 0.8 gate-drain charge q gd 1.15 gate resistance r g f = 1.0 mhz 3.0 input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 225 pf output capacitance c oss 50 reverse transfer capacitance c rss 28 switching tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 7.5 12 ns rise time t r 12.5 20 turn-off delay time t d(off) 19 30 fall time t f 15 25 output characteristics 0 2 4 6 8 10 0246810 v gs = 10 thru 5 v v ds - drain-to-source voltage (v) - drain current (a) i d 4 v 3 v transfer characteristics 0 2 4 6 8 10 012345 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72503 s-80642-rev. d, 24-mar-08 www.vishay.com 3 vishay siliconix si2304bds typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( ) r ds(on) 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0246810 i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 012345 v ds = 15 v i d = 2.5 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 10 0.001 v sd - source-to-drain voltage (v) - source current (a) i s 0.01 0.1 1 capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 2.5 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) 0.00 0.04 0.08 0.12 0.16 0.20 0246810 i d = 2.5 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 72503 s-80642-rev. d, 24-mar-08 vishay siliconix si2304bds typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72503. threshold voltage - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power 0 10 2 4 power (w) time (s) 1 600 10 6 0.1 0.01 100 t a = 25 c single pulse 8 safe operating area 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d 0.1 r ds(on)* limited by bv dss limited i dm limited 1 ms 10 ms 100 ms dc, 100 s, 10 s, 1 s 10 s 100 s v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified > normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 - 2 110 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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